IPW65R099C6

IPW65R099C6

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673983

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current38 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time10.6 ns

Width5.21 mm

Rds On - Drain-Source Resistance89 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time77 ns

Height21.1 mm

Length16.13 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge127 nC

Mounting StyleThrough Hole

Package / CaseTO-247-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingTube

CNHTS8541290000

BrandInfineon Technologies

Factory Pack Quantity240

ManufacturerInfineon

Channel ModeEnhancement

SeriesCoolMOS C6

TARIC8541290000

Product CategoryMOSFET

RoHS Details

DescriptionMOSFET N-Ch 700V 38A TO247-3

ImageInfineon Technologies IPW65R099C6

Fall Time6 ns

Product TypeMOSFET

SubcategoryMOSFETs

Unit Weight1.340411 oz

Part # AliasesIPW65R99C6XK SP000896396 IPW65R099C6FKSA1

USHTS8541290095

Pd - Power Dissipation278 W

TradenameCoolMOS

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time9 ns