参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current22.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12.4 ns
Width5.21 mm
Height21.1 mm
Rds On - Drain-Source Resistance135 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length16.13 mm
KRHTS8541299000
Qg - Gate Charge86 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-247-3
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingTube
RoHS Details
ImageInfineon Technologies IPW65R150CFD
Channel ModeEnhancement
SeriesCoolMOS CFD2
SubcategoryMOSFETs
Fall Time5.6 ns
BrandInfineon Technologies
Factory Pack Quantity240
Unit Weight1.340411 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET N-Ch 700V 22.4A TO247-3
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation195.3 W
Part # AliasesIPW65R15CFDXK SP000907038 IPW65R150CFDFKSA1
Vds - Drain-Source Breakdown Voltage650 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time7.6 nS