SPA11N80C3

SPA11N80C3

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045680462

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.1 V

TechnologySi

Id - Continuous Drain Current11 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time25 ns

Width4.85 mm

Rds On - Drain-Source Resistance450 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time72 ns

Length10.65 mm

Height16.15 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge64 nC

Package / CaseTO-220FP-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingTube

CNHTS8541290000

BrandInfineon Technologies

SeriesCoolMOS C3

ManufacturerInfineon

TARIC8541290000

Product CategoryMOSFET

Channel ModeEnhancement

Factory Pack Quantity500

Fall Time10 ns

Product TypeMOSFET

RoHS Details

DescriptionMOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3

ImageInfineon Technologies SPA11N80C3

Unit Weight0.075839 oz

SubcategoryMOSFETs

USHTS8541290095

Part # AliasesSP000216320 SPA11N8C3XK SPA11N80C3XKSA1

Pd - Power Dissipation34 W

TradenameCoolMOS

Vds - Drain-Source Breakdown Voltage800 V

Number of Channels1 Channel

Rise Time15 ns