SPP08N80C3

SPP08N80C3

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045680505

描述：N-Channel MOSFET Transistor

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

TechnologySi

Vgs th - Gate-Source Threshold Voltage2.1 V

Transistor PolarityN-Channel

Id - Continuous Drain Current8 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 20 V, + 20 V

JPHTS8541290100

Height15.65 mm

Length10 mm

Product CategoryMOSFET

CAHTS8541290000

Minimum Operating Temperature- 55 C

Typical Turn-On Delay Time25 ns

ImageInfineon Technologies SPP08N80C3

Rds On - Drain-Source Resistance650 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time72 ns

Maximum Operating Temperature+ 150 C

Package / CaseTO-220-3

PackagingTube

Width4.4 mm

DescriptionMOSFET N-Ch 800V 8A TO220-3 CoolMOS C3

Mounting StyleThrough Hole

TARIC8541290000

Factory Pack Quantity500

ManufacturerInfineon

Product TypeMOSFET

Qg - Gate Charge45 nC

BrandInfineon Technologies

RoHS Details

MXHTS85412999

SubcategoryMOSFETs

SeriesCoolMOS C3

USHTS8541290095

Channel ModeEnhancement

Fall Time10 ns

Unit Weight0.211644 oz

CNHTS8541290000

Part # AliasesSPP8N8C3XK SP000683156 SPP08N80C3XKSA1

Pd - Power Dissipation104 W

TradenameCoolMOS

Vds - Drain-Source Breakdown Voltage800 V

Number of Channels1 Channel

Rise Time15 ns