SPU02N60C3

SPU02N60C3

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045680555

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.1 V

TechnologySi

Id - Continuous Drain Current1.8 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6 ns

Width2.38 mm

Rds On - Drain-Source Resistance3 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time68 ns

Length6.73 mm

Height6.22 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge9.5 nC

Package / CaseTO-251-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

PackagingTube

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

SeriesCoolMOS C3

ManufacturerInfineon

Product CategoryMOSFET

TARIC8541290000

Channel ModeEnhancement

Factory Pack Quantity1500

RoHS Details

Product TypeMOSFET

Fall Time12 ns

DescriptionMOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS C3

ImageInfineon Technologies SPU02N60C3

Unit Weight0.139332 oz

SubcategoryMOSFETs

USHTS8541290095

Part # AliasesSPU2N6C3XK SP000015064 SPU02N60C3BKMA1

Pd - Power Dissipation25 W

TradenameCoolMOS

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time3 ns