参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage2.1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current17 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length16.13 mm
Minimum Operating Temperature- 55 C
JPHTS8541290100
Height21.1 mm
CAHTS8541290000
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance290 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
Maximum Operating Temperature+ 150 C
ImageInfineon Technologies SPW17N80C3
Package / CaseTO-247-3
PackagingTube
Width5.21 mm
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
Mounting StyleThrough Hole
TARIC8541290000
ManufacturerInfineon
Factory Pack Quantity240
Product TypeMOSFET
Qg - Gate Charge88 nC
MXHTS85412999
RoHS Details
SeriesCoolMOS C3
USHTS8541290095
Channel ModeEnhancement
Fall Time12 ns
Unit Weight1.340411 oz
CNHTS8541210000
Part # AliasesSPW17N8C3XK SP000013369 SPW17N80C3FKSA1
Pd - Power Dissipation227 W
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time15 ns