参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Width4.85 mm
Rds On - Drain-Source Resistance2.7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Length10.65 mm
Height16.15 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge16 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
PackagingTube
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
BrandInfineon Technologies
SeriesCoolMOS C3
ManufacturerInfineon
TARIC8541290000
Factory Pack Quantity500
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
Product TypeMOSFET
Fall Time18 ns
DescriptionMOSFET N-Ch 800V 2A TO220FP-3 CoolMOS C3
ImageInfineon Technologies SPA02N80C3
Unit Weight0.211644 oz
SubcategoryMOSFETs
USHTS8541290095
Part # AliasesSPA2N8C3XK SP000216295 SPA02N80C3XKSA1
Pd - Power Dissipation30.5 W
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time15 ns