参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current20.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time67 ns
Width5.21 mm
Height21.1 mm
Length16.13 mm
MXHTS85412999
Qg - Gate Charge87 nC
KRHTS8541299000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time4.5 ns
PackagingTube
TARIC8541290000
Unit Weight1.340411 oz
ImageInfineon Technologies SPW20N60C3
SeriesCoolMOS C3
BrandInfineon Technologies
Factory Pack Quantity240
Pd - Power Dissipation208 W
Part # AliasesSP000013729 SPW2N6C3XK SPW20N60C3FKSA1
Product TypeMOSFET
ManufacturerInfineon
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameCoolMOS
Number of Channels1 Channel
Rise Time5 ns