STB24N60DM2

STB24N60DM2

厂牌：iscsemi

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045680751

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4 V

TechnologySi

Id - Continuous Drain Current18 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 25 V, + 25 V

PackagingCut Tape

PackagingMouseReel

PackagingReel

Typical Turn-On Delay Time15 ns

Minimum Operating Temperature- 55 C

Factory Pack Quantity1000

ManufacturerSTMicroelectronics

Rds On - Drain-Source Resistance200 mOhms

Package / CaseTO-263-3

BrandSTMicroelectronics

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

RoHS Details

ImageSTMicroelectronics STB24N60DM2

Qg - Gate Charge29 nC

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET PTD HIGH VOLTAGE

Product TypeMOSFET

SeriesSTB24N60DM2

Channel ModeEnhancement

Unit Weight0.139332 oz

Fall Time15 ns

Pd - Power Dissipation150 W

TradenameFDmesh

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time8.7 ns