STB35N65M5

STB35N65M5

厂牌：iscsemi

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045680778

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

TechnologySi

Vgs th - Gate-Source Threshold Voltage4 V

Transistor PolarityN-Channel

Id - Continuous Drain Current27 A

Vgs - Gate-Source Voltage- 25 V, + 25 V

Minimum Operating Temperature- 55 C

Rds On - Drain-Source Resistance85 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 150 C

Typical Turn-Off Delay Time64 ns

ImageSTMicroelectronics STB35N65M5

Package / CaseTO-263-3

PackagingMouseReel

PackagingReel

PackagingCut Tape

BrandSTMicroelectronics

SubcategoryMOSFETs

Product CategoryMOSFET

Mounting StyleSMD/SMT

DescriptionMOSFET POWER MOSFET N-CH 650V

ManufacturerSTMicroelectronics

Factory Pack Quantity1000

Qg - Gate Charge83 nC

RoHS Details

SeriesMdmesh M5

Product TypeMOSFET

Channel ModeEnhancement

Fall Time16 ns

Unit Weight0.139332 oz

Pd - Power Dissipation160 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time12 ns

TypePower MOSFET