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STD11NM50N
厂牌：iscsemi
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045680793
描述：
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current8.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance470 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge19 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time10 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
ImageSTMicroelectronics STD11NM50N
Unit Weight0.139332 oz
SeriesSTD11NM50N
Factory Pack Quantity2500
BrandSTMicroelectronics
Pd - Power Dissipation70 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET POWER MOSFET N-CH 500V
Vds - Drain-Source Breakdown Voltage500 V
USHTS8541290075
TradenameMDmesh
Number of Channels1 Channel
Rise Time10 ns
TypePower MOSFET