参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time6.7 ns
Rds On - Drain-Source Resistance4.5 Ohms
Transistor Type1 N-Channel
Width2.4 mm
Height6.2 mm
Length6.6 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge7 nC
Package / CaseTO-251-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 65 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time12 ns
PackagingTube
TARIC8541210000
ImageSTMicroelectronics STD2NC45-1
Unit Weight0.139332 oz
SeriesSTD2NC45-1
Factory Pack Quantity3000
BrandSTMicroelectronics
Pd - Power Dissipation30 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET N-Ch, 450V-4.1ohms 1.5A
Vds - Drain-Source Breakdown Voltage450 V
USHTS8541290095
TradenameSuperMESH
Number of Channels1 Channel
Rise Time4 ns