参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current9 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
ImageSTMicroelectronics STD11N65M5
Rds On - Drain-Source Resistance480 mOhms
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
DescriptionMOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS
Mounting StyleSMD/SMT
TARIC8541210000
BrandSTMicroelectronics
Factory Pack Quantity2500
Qg - Gate Charge17 nC
Product TypeMOSFET
MXHTS85412999
ManufacturerSTMicroelectronics
RoHS Details
SeriesMdmesh M5
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation85 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel