参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current6.5 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
JPHTS8541290100
CAHTS8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
ImageSTMicroelectronics STD9NM60N
Rds On - Drain-Source Resistance745 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
PackagingCut Tape
PackagingReel
PackagingMouseReel
DescriptionMOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO
Mounting StyleSMD/SMT
TARIC8541210000
Factory Pack Quantity2500
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge17.4 nC
RoHS Details
MXHTS85412999
SubcategoryMOSFETs
SeriesSTD9NM60N
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation70 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel