参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance1.05 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge14 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
Fall Time12 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageSTMicroelectronics STD7NM64N
Unit Weight0.139332 oz
SeriesSTD7NM64N
BrandSTMicroelectronics
Pd - Power Dissipation60 W
Factory Pack Quantity2500
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II
Vds - Drain-Source Breakdown Voltage640 V
USHTS8541290075
TradenameMDmesh
Number of Channels1 Channel
Rise Time10 ns