参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current5 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
JPHTS8541290100
CAHTS8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time7 ns
ImageSTMicroelectronics STU7NM60N
Rds On - Drain-Source Resistance900 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-251-3
PackagingTube
DescriptionMOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh
Mounting StyleThrough Hole
Factory Pack Quantity3000
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge14 nC
MXHTS85412999
SubcategoryMOSFETs
RoHS Details
SeriesSTU7NM60N
USHTS8541290095
Channel ModeEnhancement
Fall Time12 ns
Unit Weight0.014110 oz
CNHTS8541290000
Pd - Power Dissipation45 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time10 ns