参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Transistor Type1 N-Channel
MXHTS85412999
Qg - Gate Charge98 nC
KRHTS8541299000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time12 ns
PackagingTube
TARIC8541290000
Unit Weight1.340411 oz
ImageSTMicroelectronics STWA57N65M5
SeriesMdmesh M5
BrandSTMicroelectronics
Pd - Power Dissipation250 W
Factory Pack Quantity600
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290075
TradenameMDmesh
Number of Channels1 Channel
Rise Time15 ns