参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current58 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Rds On - Drain-Source Resistance45 mOhms
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Qg - Gate Charge143 nC
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8542319000
PackagingTube
SubcategoryMOSFETs
ImageSTMicroelectronics STW69N65M5
Channel ModeEnhancement
BrandSTMicroelectronics
Product TypeMOSFET
ManufacturerSTMicroelectronics
USHTS8541290075
Unit Weight1.340411 oz
Factory Pack Quantity600
Product CategoryMOSFET
DescriptionMOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS
Pd - Power Dissipation330 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel