参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current39 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
ImageSTMicroelectronics STW48NM60N
Package / CaseTO-247-3
PackagingTube
SubcategoryMOSFETs
Maximum Operating Temperature+ 150 C
BrandSTMicroelectronics
TARIC8541290000
Mounting StyleThrough Hole
Product CategoryMOSFET
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 600V 0.055 Ohm 39A Mdmesh II
Factory Pack Quantity600
Qg - Gate Charge124 nC
MXHTS85412999
RoHS Details
SeriesSTW48NM60N
Product TypeMOSFET
USHTS8541290075
Channel ModeEnhancement
Unit Weight1.340411 oz
CNHTS8541290000
Pd - Power Dissipation255 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel