参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current17 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time11.5 ns
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time73 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge46 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time37 ns
PackagingTube
ImageSTMicroelectronics STW24NM60N
Unit Weight1.340411 oz
Factory Pack Quantity600
SeriesSTW24NM60N
BrandSTMicroelectronics
Pd - Power Dissipation125 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 600V 0.18 Ohm 17A MDmesh II
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameMDmesh
Number of Channels1 Channel
Rise Time16.5 ns