参数项参数值
参数项参数值
Forward Transconductance - Min190 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.7 V
TechnologySi
Id - Continuous Drain Current173 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Width4.4 mm
Rds On - Drain-Source Resistance2.75 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time82 ns
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge142 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
CNHTS8541290000
Factory Pack Quantity1000
BrandInfineon / IR
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541290000
ManufacturerInfineon
DescriptionMOSFET MOSFET N CH 60V 173A TO-220AB
ImageInfineon / IR IRFB7537PBF
Fall Time84 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
Pd - Power Dissipation230 W
USHTS8541290095
TradenameStrongIRFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time105 ns
Moisture Sensitivity Level1 (Unlimited)