IRFSL7437PBF

厂牌：Infineon Technologies

包装：Tube 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045692772

描述：Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262

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商品参数

参数项参数值

Forward Transconductance - Min160 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.9 V

TechnologySi

Id - Continuous Drain Current250 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time19 ns

Width4.5 mm

Rds On - Drain-Source Resistance1.8 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time78 ns

Height9.45 mm

Length10.2 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge225 nC

Mounting StyleThrough Hole

Package / CaseTO-262-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

PackagingTube

CNHTS8541290000

Factory Pack Quantity1000

BrandInfineon / IR

Channel ModeEnhancement

Product TypeMOSFET

Product CategoryMOSFET

TARIC8541290000

ManufacturerInfineon

DescriptionMOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262

ImageInfineon / IR IRFSL7437PBF

Fall Time53 ns

RoHS Details

Unit Weight0.084199 oz

SubcategoryMOSFETs

Pd - Power Dissipation230 W

USHTS8541290095

TradenameStrongIRFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time70 ns

Moisture Sensitivity Level1 (Unlimited)