CSD19505KTT

CSD19505KTT

厂牌：Texas Instruments

包装：CSD19505KTT_3_TO-263_KTT 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045694867

描述：MOSFET 80V, N-Channel NexFET Power Mosfet

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min262 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.2 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current150 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Width10.26 mm

Height19.7 mm

MXHTS85412999

Typical Turn-On Delay Time11 ns

Length9.25 mm

KRHTS8541299000

Rds On - Drain-Source Resistance3.1 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time22 ns

JPHTS8541290100

CNHTS8541290000

Minimum Operating Temperature- 55 C

CAHTS8541290000

Mounting StyleSMD/SMT

Package / CaseTO-263-3

Qg - Gate Charge76 nC

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Moisture SensitiveYes

BrandTexas Instruments

TARIC8541290000

RoHS Details

ImageTexas Instruments CSD19505KTT

Product CategoryMOSFET

ManufacturerTexas Instruments

SubcategoryMOSFETs

Factory Pack Quantity500

SeriesCSD19505KTT

DescriptionMOSFET 80V, N-Channel NexFET Power Mosfet

Product TypeMOSFET

Channel ModeEnhancement

Fall Time3 ns

USHTS8541290095

Unit Weight0.069645 oz

Pd - Power Dissipation300 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage80 V

Number of Channels1 Channel

Rise Time5 ns

Moisture Sensitivity Level2 (1 Year)