CSD19506KTT

CSD19506KTT

厂牌：Texas Instruments

包装：CSD19506KTT_3_TO-263_KTT 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045694868

描述：Trans MOSFET N-CH 80V 200A 3-Pin(2+Tab) DDPAK T/R

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min297 S

CNHTS8541290000

ConfigurationSingle

Width10.26

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current150 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time14 ns

Height4.7 mm

MXHTS85412999

Length9.25 mm

Rds On - Drain-Source Resistance2.3 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time30 ns

Package / CaseTO-263-3

KRHTS8541299000

Maximum Operating Temperature+ 175 C

Mounting StyleSMD/SMT

PackagingCut Tape

PackagingMouseReel

PackagingReel

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Qg - Gate Charge120 nC

TARIC8541290000

Moisture SensitiveYes

ManufacturerTexas Instruments

Factory Pack Quantity500

RoHS Details

BrandTexas Instruments

ImageTexas Instruments CSD19506KTT

SubcategoryMOSFETs

SeriesCSD19506KTT

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET

Channel ModeEnhancement

USHTS8541290095

Fall Time5 ns

Unit Weight0.069878 oz

Pd - Power Dissipation375 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage80 V

Number of Channels1 Channel

Rise Time7 ns

Moisture Sensitivity Level2 (1 Year)