CSD19506KTTT

CSD19506KTTT

厂牌：Texas Instruments

包装：Tape & Reel (TR) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045694869

描述：Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min297 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current200 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Width10.26 mm

Height19.7 mm

MXHTS85412999

Typical Turn-On Delay Time14 ns

Length9.25 mm

KRHTS8541299000

Rds On - Drain-Source Resistance2.3 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time30 ns

JPHTS8541290100

CNHTS8541290000

Minimum Operating Temperature- 55 C

CAHTS8541290000

Mounting StyleSMD/SMT

Package / CaseTO-263-3

Qg - Gate Charge120 nC

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Moisture SensitiveYes

BrandTexas Instruments

TARIC8541290000

RoHSIn Transition

ImageTexas Instruments CSD19506KTTT

Factory Pack Quantity50

SubcategoryMOSFETs

Product CategoryMOSFET

ManufacturerTexas Instruments

Product TypeMOSFET

SeriesCSD19506KTT

DescriptionMOSFET

Channel ModeEnhancement

Fall Time5 ns

USHTS8541290095

Unit Weight0.069878 oz

Pd - Power Dissipation375 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage80 V

Number of Channels1 Channel

Rise Time7 ns

Moisture Sensitivity Level2 (1 Year)