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CSD19506KTTT
厂牌：Texas Instruments
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045694871
描述：Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min297 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current200 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width10.26 mm
Height19.7 mm
MXHTS85412999
Typical Turn-On Delay Time14 ns
Length9.25 mm
KRHTS8541299000
Rds On - Drain-Source Resistance2.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
JPHTS8541290100
CNHTS8541290000
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Qg - Gate Charge120 nC
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Moisture SensitiveYes
BrandTexas Instruments
TARIC8541290000
RoHSIn Transition
ImageTexas Instruments CSD19506KTTT
Factory Pack Quantity50
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerTexas Instruments
Product TypeMOSFET
SeriesCSD19506KTT
DescriptionMOSFET
Channel ModeEnhancement
Fall Time5 ns
USHTS8541290095
Unit Weight0.069878 oz
Pd - Power Dissipation375 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time7 ns
Moisture Sensitivity Level2 (1 Year)