参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min420
Width1.3 mm
Height0.94 mm
Length2.9 mm
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.001376 oz
RoHS Details
Pd - Power Dissipation225 mW
ImageON Semiconductor BC849CLT1G
SeriesBC849CL
Factory Pack Quantity3000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
DescriptionBipolar Transistors - BJT 100mA 30V NPN
Moisture Sensitivity Level1 (Unlimited)