参数项参数值
参数项参数值
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.3 mm
Height1 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation330 mW
SeriesBC849
BrandInfineon Technologies
Part # AliasesSP000010564 BC849CE6327XT BC849CE6327HTSA1
ImageInfineon Technologies BC 849C E6327
ManufacturerInfineon
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTOR