参数项参数值
参数项参数值
DC Current Gain hFE Max420 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min420
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000988 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
Part # Aliases934022070115
ImageNexperia BC849CW,115
BrandNexperia
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerNexperia
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS LOW NOISE
Moisture Sensitivity Level1 (Unlimited)