参数项参数值
参数项参数值
Forward Transconductance - Min80 mMhos
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.6 V
TechnologySi
Id - Continuous Drain Current170 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance6 Ohms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time40 ns
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandON Semiconductor
PackagingCut Tape
PackagingReel
PackagingMouseReel
CNHTS8541210000
Product CategoryMOSFET
ManufacturerON Semiconductor
Product TypeMOSFET
TARIC8541290000
Channel ModeEnhancement
RoHS Details
Factory Pack Quantity3500
ImageON Semiconductor BSS123LT7G
SubcategoryMOSFETs
DescriptionMOSFET NFET SOT23 100V 170MA 6.0
USHTS8541290095
Pd - Power Dissipation225 mW
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)