参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 500 mA, 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min300 at 500 mA, 5 V at NPN, 200 at 1 A, 5 V at NPN, 300 at 100 mA, 5 V at PNP, 250 at 500 mA, 5 V at PNP
Width1.7 mm
Height1 mm
Length3.1 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTSOP-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.000705 oz
ImageNexperia PBSS4140DPN,115
BrandNexperia
Pd - Power Dissipation370 mW
ManufacturerNexperia
Factory Pack Quantity3000
Part # Aliases934056660115
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN/PNP 40V 1A
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)