参数项参数值
参数项参数值
DC Current Gain hFE Max250 at 1 mA, 5 V
Gain Bandwidth Product fT220 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Height1 mm
Length3 mm
QualificationAEC-Q101
KRHTS8541299000
ManufacturerNexperia
Minimum Operating Temperature- 65 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Package / CaseSOT-23-3
Factory Pack Quantity3000
DC Collector/Base Gain hfe Min250
BrandNexperia
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width1.4 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageNexperia PBSS4160T,215
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7
Product TypeBJTs - Bipolar Transistors
MXHTS85412101
USHTS8541290075
Unit Weight0.000282 oz
CNHTS8541210000
Part # Aliases934057667215
Pd - Power Dissipation270 mW
Moisture Sensitivity Level1 (Unlimited)