参数项参数值
参数项参数值
DC Current Gain hFE Max150 at 1 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max100 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Height1.6 mm
Length4.6 mm
QualificationAEC-Q101
RoHS Details
Factory Pack Quantity4000
BrandNexperia
KRHTS8541299000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
JPHTS8541290100
Package / CaseSOT-89-3
TARIC8541290000
DC Collector/Base Gain hfe Min150 at 1 mA, 5 V, 150 at 250 mA, 5 V, 150 at 500 mA, 5 V, 125 at 1 A, 5 V
SubcategoryTransistors
CAHTS8541290000
ManufacturerNexperia
Product TypeBJTs - Bipolar Transistors
Width2.6 mm
Mounting StyleSMD/SMT
ImageNexperia PBSS9110X,135
DescriptionBipolar Transistors - BJT LO VCESAT(BISS)TRANS
MXHTS85412999
Product CategoryBipolar Transistors - BJT
USHTS8541290075
Unit Weight0.001410 oz
CNHTS8541290000
Part # Aliases934057976135
Pd - Power Dissipation2000 mW