参数项参数值
参数项参数值
DC Current Gain hFE Max220 at 100 mA, 2 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max20 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min220 at 100 mA, 2 V, 220 at 500 mA, 2 V, 220 at 1 A, 2 V, 200 at 2 A, 2 V, 150 at 3 A, 2 V
Width2.6 mm
Height1.6 mm
Length4.6 mm
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.001411 oz
ImageNexperia PBSS4320X,135
BrandNexperia
Pd - Power Dissipation1600 mW
ManufacturerNexperia
Part # Aliases934057107135
Factory Pack Quantity4000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-11
USHTS8541290075