参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 1 mA, 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current+/- 3 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current1.35 A, - 1.1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min50
Width1.7 mm
Height1 mm
Length3.1 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTSOP-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.035274 oz
ImageNexperia PBSS4240DPN,115
BrandNexperia
Pd - Power Dissipation370 mW
ManufacturerNexperia
Factory Pack Quantity3000
Part # Aliases934057314115
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7
USHTS8541210075