参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 1 mA, 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Height1 mm
Length2.2 mm
QualificationAEC-Q101
ManufacturerNexperia
Factory Pack Quantity3000
KRHTS8541219000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandNexperia
Minimum Operating Temperature- 65 C
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Package / CaseSC-70-3
CAHTS8541210000
DC Collector/Base Gain hfe Min300
SubcategoryTransistors
TARIC8541210000
RoHS Details
Product TypeBJTs - Bipolar Transistors
Width1.35 mm
Mounting StyleSMD/SMT
ImageNexperia PBSS5140U,115
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7
MXHTS85412101
Product CategoryBipolar Transistors - BJT
USHTS8541210075
Unit Weight0.000988 oz
CNHTS8541210000
Part # Aliases934056513115
Pd - Power Dissipation250 mW