参数项参数值
参数项参数值
Forward Transconductance - Min8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2.4 V
TechnologySi
Id - Continuous Drain Current31 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance65 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time39 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge42 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time63 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IRFR5305TRLPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation110 W
BrandInfineon Technologies
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT PCh -55V -28A 65mOhm 42nC
Vds - Drain-Source Breakdown Voltage55 V
USHTS8541290095
Number of Channels1 Channel
Rise Time66 ns
Moisture Sensitivity Level1 (Unlimited)