参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 1 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.3 V
Package / CaseX2-DFN0806-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.282192 oz
ImageDiodes Incorporated MMBT3904FA-7B
Pd - Power Dissipation435 mW
RoHS Details
Factory Pack Quantity10000
SeriesMMBT3904FA
ManufacturerDiodes Incorporated
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
DescriptionBipolar Transistors - BJT 40V NPN SM Trans 435mW 40V Vceo
Moisture Sensitivity Level1 (Unlimited)