参数项参数值
参数项参数值
DC Current Gain hFE Max40 at 100 uA, 1 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max40 V
CNHTS8541210000
ConfigurationSingle
Width1.35 mm
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Height1 mm
MXHTS85412101
Length2.2 mm
Collector-Emitter Saturation Voltage300 mV
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V
Package / CaseSOT-323
KRHTS8541299000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 65 C
TARIC8541210000
ManufacturerCentral Semiconductor
Factory Pack Quantity3000
RoHS Details
BrandCentral Semiconductor
ImageCentral Semiconductor CMST3904 TR PBFREE
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 60V 200mA NPN
USHTS8541290095
Unit Weight0.000176 oz
Pd - Power Dissipation250 mW
TradenameSupermini
Moisture Sensitivity Level1 (Unlimited)