参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
KRHTS8541219000
Collector-Emitter Saturation Voltage300 mV
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
CNHTS8541210000
Package / CaseDFN0606-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity10000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageDiodes Incorporated MMBT3904FZ-7B
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
TARIC8541210000
RoHS Details
SeriesMMBT3904FZ
DescriptionBipolar Transistors - BJT NPN 40Vceo 0.3W 200mW 300MHz
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.001062 oz
USHTS8541210095
Pd - Power Dissipation350 mW
TradenameMMBT3904
Moisture Sensitivity Level1 (Unlimited)