参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 1 V
Gain Bandwidth Product fT-
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.3 V
DC Collector/Base Gain hfe Min100 at 10 mA, 1 V
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000176 oz
TARIC8541210000
ImagePanjit MMBT3904W_R1_00001
Pd - Power Dissipation150 mW
RoHS Details
Factory Pack Quantity3000
SeriesGPT-02TAN
BrandPanjit
ManufacturerPanjit
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT /S1A/TR/7"/HF/3K/SOT-323/TRA/SOT/GPT-02TAN/GPT02-QI01/PJ///
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)