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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min-
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance31 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time90 ns
Qg - Gate Charge120 nC
Package / CaseTSMT-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Development Kit-
Channel ModeEnhancement
Fall Time50 ns
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryMOSFET
ImageROHM Semiconductor RQ1E050RPTR
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.5 W
Part # AliasesRQ1E050RP
DescriptionMOSFET RECOMMENDED ALT 755-RF4E075ATTCR
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity Level1 (Unlimited)