参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current36 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Width6.1 mm
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time190 ns
Height2.3 mm
Length6.5 mm
MXHTS85412101
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541210101
CAHTS8541210000
Moisture SensitiveYes
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541210000
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
PackagingReel
PackagingCut Tape
ImageRenesas Electronics NP36P06SLG-E1-AY
Channel ModeEnhancement
BrandRenesas Electronics
Fall Time110 ns
Product TypeMOSFET
ManufacturerRenesas Electronics
Factory Pack Quantity2500
Unit Weight0.011993 oz
USHTS8541210095
Product CategoryMOSFET
DescriptionMOSFET MOSFET
Pd - Power Dissipation1200 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)