参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4.7 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityP-Channel
Id - Continuous Drain Current15 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height2.3 mm
CAHTS8541290000
Length6.5 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time9.5 ns
Product CategoryMOSFET
ImageInfineon Technologies SPD15P10PGBTMA1
Rds On - Drain-Source Resistance160 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time33 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-252-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionMOSFET P-Ch -100V 15A DPAK-2
Width6.22 mm
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerInfineon
BrandInfineon Technologies
Qg - Gate Charge48 nC
Product TypeMOSFET
Factory Pack Quantity2500
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
SeriesXPD15P10
USHTS8541290095
Channel ModeEnhancement
Fall Time16 ns
Unit Weight0.139332 oz
CNHTS8541290000
Part # AliasesSPD15P10P G SP000212233
Pd - Power Dissipation128 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time23 ns
Moisture Sensitivity Level1 (Unlimited)