参数项参数值
参数项参数值
Forward Transconductance - Min1.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Width1.7 mm
Rds On - Drain-Source Resistance225 mOhms
Length2 mm
Height0.7 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge-
Package / CaseUFM-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
ProductMOSFET
BrandToshiba
ManufacturerToshiba
Product CategoryMOSFET
TARIC8541210000
Channel ModeEnhancement
Factory Pack Quantity3000
RoHS Details
Product TypeMOSFET
DescriptionMOSFET Vds=-30V Id=-2A 3Pin
ImageToshiba SSM3J117TU,LF
Unit Weight0.050717 oz
SubcategoryMOSFETs
USHTS8541210095
Pd - Power Dissipation800 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
TypePower MOSFET
Moisture Sensitivity Level1 (Unlimited)