参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current88 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance30 mOhms
MXHTS85412999
KRHTS8541299000
Mounting StyleChassis Mount
Qg - Gate Charge140 nC
Package / CaseSOT-227-4
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingTube
SubcategoryMOSFETs
Channel ModeEnhancement
BrandMicrochip / Microsemi
ManufacturerMicrochip
Factory Pack Quantity1
Product TypeMOSFET
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET FG, MOSFET, 300V, 0.030_OHM, SOT-227
Pd - Power Dissipation520 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)