参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance85 mOhms
Typical Turn-Off Delay Time43 ns
Width16.26 mm
Height5.31 mm
Length21.46 mm
MXHTS85412999
Qg - Gate Charge130 nC
KRHTS8541299000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time7 ns
PackagingTube
TARIC8541290000
RoHS Details
Unit Weight1.340411 oz
ImageMicrochip / Microsemi APT30M85BVRG
BrandMicrochip / Microsemi
Factory Pack Quantity1
Pd - Power Dissipation300 W
Product TypeMOSFET
ManufacturerMicrochip
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET FG, MOSFET, 300V, TO-247, RoHS
Vds - Drain-Source Breakdown Voltage300 V
USHTS8541290095
TradenamePower MOS V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)