参数项参数值
参数项参数值
Forward Transconductance - Min50 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
MXHTS85412999
Rds On - Drain-Source Resistance2.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Qg - Gate Charge37 nC
Package / CasePG-TDSON-8
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
Channel ModeEnhancement
Fall Time8 ns
TARIC8541290000
ImageInfineon Technologies BSC028N06NSTATMA1
RoHS Details
Factory Pack Quantity5000
ManufacturerInfineon
Unit Weight0.004180 oz
BrandInfineon Technologies
Product TypeMOSFET
DescriptionMOSFET TRENCH 40<-<100V
Product CategoryMOSFET
Pd - Power Dissipation83 W
SubcategoryMOSFETs
Part # AliasesBSC028N06NST SP001666498
USHTS8542390001
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time38 ns
Moisture Sensitivity Level1 (Unlimited)