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IRFH5210TRPBF
厂牌：Infineon Technologies
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045732263
描述：MOSFET N-CH 100V 10A 8-PQFN
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min66 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.2 ns
Width5 mm
Rds On - Drain-Source Resistance14.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Length6 mm
Height0.83 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge40 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
BrandInfineon / IR
Factory Pack Quantity4000
ManufacturerInfineon
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC
Fall Time6.5 ns
ImageInfineon / IR IRFH5210TRPBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.010018 oz
USHTS8541290095
Pd - Power Dissipation3.6 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time9.7 ns
Moisture Sensitivity Level1 (Unlimited)