RSF015N06FRATL

厂牌：Rohm Semiconductor

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045732291

描述：MOSFET AEC-Q101 N-CH 60V TUMT; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:800mW; Transistor Case Style:TUMT; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current1.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time6 ns

Rds On - Drain-Source Resistance210 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time15 ns

MXHTS85411001

CNHTS8541210000

Qg - Gate Charge2 nC

Package / CaseTUMT-3

Mounting StyleSMD/SMT

JPHTS8541100901

Maximum Operating Temperature+ 150 C

CAHTS8541100090

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time10 ns

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandROHM Semiconductor

RoHS Details

ImageROHM Semiconductor RSF015N06FRATL

Product CategoryMOSFET

SubcategoryMOSFETs

Factory Pack Quantity3000

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation800 mW

Part # AliasesRSF015N06FRA

USHTS8541100080

DescriptionMOSFET Nch 60V Vds 1.5A 0.255Rds(on) 2Qg

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time9 ns

Moisture Sensitivity Level1 (Unlimited)